Distributed Gate Thyristors

 

Distributed Gate thyristors may also be known as High Speed Pulse thyristors. They have an enhanced turn-on mechanism thanks to field aided drift and high levels of gate-cathode interdigitating. This means that they can cost-effectively block high voltages. Due to the drift region having additional PN layers, this reshapes the field profile and allows for increased efficiency in high voltage applications.

A key attribute of a distributed gate thyristor is that it can help the anode to self-limit before reaching destruction.

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